Non-replacement gate nanomesh field effect transistor with epitixially grown source and drain

A semiconductor structure comprising:

• a plurality of semiconductor nanowires spaced from a top surface of a substrate by different distances and extending along a lengthwise direction;
• a plurality of gate dielectrics contacting all lengthwise surfaces of said plurality of semiconductor nanowires that extend along said lengthwise direction;
• a gate electrode contacting said plurality of gate dielectrics and laterally surrounding each semiconductor nanowire that is not in contact with said substrate and is included among said plurality of semiconductor nanowires;
• and
• a gate spacer in physical contact with sidewall surfaces of said gate electrode, wherein said gate electrode comprises a stack of a metallic gate electrode and a semiconductor gate electrode, wherein said metallic gate electrode has a lesser width than said semiconductor gate electrode.

A semiconductor structure comprising:

• a plurality of semiconductor nanowires spaced from a top surface of a substrate by different distances and extending along a lengthwise direction;
• a plurality of gate dielectrics contacting all lengthwise surfaces of said plurality of semiconductor nanowires that extend along said lengthwise direction;
• a gate electrode contacting said plurality of gate dielectrics and laterally surrounding each semiconductor nanowire that is not in contact with said substrate and is included among said plurality of semiconductor nanowires;
• and
• a gate spacer in physical contact with sidewall surfaces of said gate electrode, wherein end surfaces of said plurality of semiconductor nanowires are vertically coincident with vertical portions of outer sidewalls of said gate spacer.