Semiconductor device and methods of making semiconductor device using graphene
AssigneeQUALCOMM Incorporated
InventorsShiqun Gu, Yang Du
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Abstract
A semiconductor device and methods of making a semiconductor device using graphene are described. A monolithic three dimensional integrated circuit device includes a first layer having first active devices. The monolithic three dimensional integrated circuit device also includes a second layer having second active devices that each include a graphene portion. The second layer can be fabricated on the first layer to form a stack of active devices. A base substrate may support the stack of active devices.
Claims18
A monolithic three dimensional integrated circuit (IC) device, comprising:
- a first layer comprising first active devices, wherein the first active devices do not include graphene;
- and
- a second layer comprising second active devices, each having a graphene portion, the second layer being fabricated on the first layer to form a stack of active devices,
- wherein the graphene portion is in direct contact with the first insulating layer.
A method for manufacturing a monolithic three dimensional integrated circuit (IC) device, comprising:
- fabricating a first layer having first active devices on a base substrate;
- growing a graphene layer on a conductive layer of a transitional substrate;
- transferring the graphene layer onto the first layer;
- and
- patterning and etching the graphene layer to form a graphene portion of a second layer having second active devices.
A monolithic three dimensional integrated circuit (IC) device, comprising:
- a first insulating layer comprising first active devices, wherein the first active devices do not include graphene;
- and
- a second layer comprising a means for fabricating second active devices, the fabricating means having a reduced temperature for fabrication and improved electron mobility, the fabricating means provided on the first insulating layer to form a stack of active devices, wherein the fabricating means is in direct contact with the first insulating layer.
Dependencies are inferred from the claim text.