Group III-V device structure having a selectively reduced impurity concentration
AssigneeInternational Rectifier Corporation
InventorMichael A. Briere
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Abstract
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
Claims18
A semiconductor structure comprising:
- a substrate;
- a transition body over said substrate;
- a group III-V intermediate body having a bottom surface over said transition body;
- a group III-V device layer over a top surface of said group III-V intermediate body;
- said group III-V intermediate body having a continuously reduced impurity concentration wherein a higher impurity concentration at said bottom surface is continuously reduced to a lower impurity concentration at said top surface;
- said lower impurity concentration occurring at a depth below said top surface and remaining substantially constant from said depth to said top surface.
A method comprising:
- fabricating a transition body over a substrate;
- fabricating a group III-V intermediate body having a bottom surface over said transition body;
- fabricating a group III-V device layer over a top surface of said group III-V intermediate body;
- wherein fabricating said group III-V intermediate body comprises forming a continuously reduced impurity concentration such that a higher impurity concentration at said bottom surface is continuously reduced to a lower impurity concentration at said top surface;
- said lower impurity concentration occurring at a depth below said top surface and remaining substantially constant from said depth to said top surface.
Dependencies are inferred from the claim text.