High electron mobility transistors and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha, Hyuk-soon Choi, Ki-ha Hong
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Abstract
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a channel layer and a channel supply layer, and the channel supply layer may be a multilayer structure. The channel supply layer may include an etch stop layer and an upper layer on the etch stop layer. A recess region may be in the upper layer. The recess region may be a region recessed to an interface between the upper layer and the etch stop layer. A gate electrode may be on the recess region.
Claims25
A high electron mobility transistor (HEMT), comprising:
- a channel layer;
- a channel supply layer configured to induce a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a first material layer and an etch stop layer, the first material layer including a recess region exposing the etch stop layer, a thickness of the channel supply layer in the recess region being less than 20 nm, and a portion of the 2DEG corresponding to the recess region does not exist due to the thickness of the channel supply layer in the recess region;
- a gate electrode on the recess region;
- and
- a source electrode and a drain electrode at respective sides of the gate electrode, wherein
- one of the etch stop layer and the first material layer is an AlxGa1-xN layer, where x is 0.1≦x<0.5;
- and
- the other of the etch stop layer and the first material layer is an AlyIn1-yN layer, where y is 0.5≦y≦0.9 and v is greater than x.
A high electron mobility transistor (HEMT), comprising:
- a channel layer;
- a channel supply layer configured to induce a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a first material layer and an etch stop layer, the first material layer including a recess region exposing the etch stop layer;
- a gate electrode on the recess region;
- and
- a source electrode and a drain electrode at respective sides of the gate electrode,
- wherein one of the etch stop layer and the first material layer is a first aluminum gallium nitride (AlGaN) layer, the first AlGaN layer being an AlxGa1-xN layer, where x is 0.1≦x<0.5;
- and
- the other of the etch stop layer and the first material layer is a first aluminum indium nitride (AlInN) layer, the first AlInN layer being an AlyIn1-yN layer, where y is 0.5≦y≦0.9 and y is greater than x.
A method of manufacturing a high electron mobility transistor (HEMT), the method comprising:
- forming a channel layer;
- forming a channel supply layer on the channel layer such that the channel supply layer includes an etch stop layer and a first material layer, the channel supply layer configured to induce a 2-dimensional electron gas (2DEG) in the channel layer, wherein one of the etch stop layer and the first material layer is a first aluminum gallium nitride (AlGaN) layer, the first AlGaN layer being an AlxGa1-xN layer where x is 0.1≦x<0.5;
- and the other of the etch stop layer and the first material layer is a first aluminum indium nitride (AlInN) layer, the first AlInN layer being an AlyIn1-yN layer, where y is 0.5≦y≦0.9 and y is greater than x;
- forming a recess region by etching a portion of the first material layer until a surface of the etch stop layer is exposed;
- forming a gate electrode in the recess region;
- and
- forming a source electrode and a drain electrode at respective sides of the gate electrode.
Dependencies are inferred from the claim text.