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US 8,796,736 B1Granted
Monolithic integration of group III nitride epitaxial layers
AssigneeHRL Laboratories, LLC
InventorsDavid F. Brown, Keisuke Shinohara, Miroslav Micovic, Andrea Corrion
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Abstract
A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.
Claims5
A monolithically integrated device comprising:
- a substrate;
- a first set of Group III nitride epitaxial layers on the substrate for a first heterostructure field effect transistor;
- wherein a region of the first set of Group III nitride epitaxial layers comprises implanted ions;
- and
- a second set of Group III nitride epitaxial layers on the region comprising implanted ions for a second heterostructure field effect transistor.
2 more elements
Dependencies are inferred from the claim text.