Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;
• a first electrode layer disposed on a top surface of the first conductive semiconductor layer;
• a conductive support member disposed under a bottom surface of the second conductive semiconductor layer;
• a second electrode layer including a reflective layer between the second conductive semiconductor layer and the conductive support member;
• a protective layer disposed between the second conductive semiconductor layer and the second electrode layer;
• a plurality of recesses recessed in a direction toward the active layer from the second conductive semiconductor layer;
• and
• a conductive layer including a plurality of contact portions spaced from each other between the second electrode layer and the second conductive semiconductor layer,
• wherein the plurality of contact portions contact a different regions of the second conductive semiconductor layer,
• wherein the protective layer includes an insulating material,
• wherein the protective layer includes a plurality of protrusions extended into the plurality of recesses,
• wherein the plurality of protrusions contact the second conductive semiconductor layer and are overlapped with the second electrode layer,
• wherein the plurality of protrusions are disposed to be closer to an outer sidewall of the light emitting structure than to the plurality of contact portions, and
• wherein the protective layer includes a first portion overlapped with the light emitting structure and a second portion being not overlapped with the light emitting structure,
• wherein the plurality of recesses is formed in three or more,
• wherein the plurality of protrusions includes an insulating material.