Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

A light-emitting diode comprising:

• a semiconductor body comprising an active region that produces radiation;
• a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body comprising a luminescence conversion material consisting of a ceramic luminescence conversion material;
• a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side;
• and
• two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body,
• wherein at least one channel is introduced from at least one of the contact layers into the semiconductor body, which channel is 1) filled with an electrically conductive material connected electrically conductively to the semiconductor body and one of the contact layers and 2) passes through the carrier body from an upper side of the carrier body to an underside of the carrier body and extends into a region of the semiconductor body containing semiconductor material.