Light emitting device, light emitting device package and illumination system
AssigneeLG Innotek Co., Ltd.
InventorsOh Min Kwon, Jong Pil Jeong
Life of this patent
Estimating the term…
Abstract
A light emitting device is provided. The light emitting device includes a first conductive type semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. An upper surface of at least first barrier layer among the barrier layers includes an uneven surface. The first barrier layer is disposed more closely to the second conductive type semiconductor layer than to the first conductive type semiconductor layer.
Claims16
A light emitting device, comprising:
- a first conductive type semiconductor layer on a substrate;
- an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer;
- and
- a second conductive type semiconductor layer on the active layer,
- wherein an upper surface of at least a first barrier layer of the plurality of the barrier layers includes an uneven surface, and the first barrier layer is disposed more closely to the second conductive type semiconductor layer than to the first conductive type semiconductor layer,
- wherein a lower surface of the active layer, corresponding to the first barrier layer having the uneven surface, is a flat surface,
- wherein the first barrier layer of the active layer has a thickness different from other ones of the plurality of barrier layers,
- wherein the first barrier layer is an outermost layer of the active layer, and the upper surface of the first barrier layer is a top surface of the active layer,
- wherein the upper surface of the first bather layer has a larger area than an area of each of an upper surface of the other ones of the plurality of barrier layers of the active layer, and
- wherein an entire upper surface of the first conductive type semiconductor layer is a flat surface.
A light emitting device, comprising:
- a first conductive type semiconductor layer on a substrate;
- an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer;
- and
- a second conductive type semiconductor layer on the active layer,
- wherein an upper surface of at least a first barrier layer of the plurality of the barrier layers includes an uneven surface, and the first barrier layer is disposed more closely to the second conductive type semiconductor layer than to the first conductive type semiconductor layer,
- wherein a lower surface of the active layer, corresponding to the first barrier layer having the uneven surface, is a flat surface,
- wherein the first barrier layer of the active layer has a thickness different from other ones of the plurality of barrier layers,
- wherein the uneven surface of the first barrier layer includes a concave part having a flat section, and
- wherein the flat section of the uneven surface of the first barrier layer includes a roughness having a lower height than a peak height of the uneven surface of the first barrier layer, wherein the first barrier layer is an outermost layer of the active layer, and the upper surface of the first barrier layer is a top surface of the active layer, wherein the upper surface of the first barrier layer has a larger area than an area of each of an upper surface of the other ones of the plurality of barrier layers of the active layer.
Dependencies are inferred from the claim text.