Thin-film semiconductor device and method for fabricating thin-film semiconductor device
AssigneePanasonic Corporation
InventorsArinobu Kanegae, Takahiro Kawashima
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AssigneePanasonic Corporation
InventorsArinobu Kanegae, Takahiro Kawashima
Estimating the term…
A thin-film semiconductor device includes: a gate electrode; a channel layer; a first amorphous semiconductor layer; a channel protective layer; a pair of second amorphous semiconductor layers formed on side surfaces of the channel layer; and a pair of contact layers which contacts the side surfaces of the channel layer via the second amorphous semiconductor layers. The gate electrode, the channel layer, the first amorphous semiconductor layer, and the channel protective layer are stacked so as to have outlines that coincide with one another in a top view. The first amorphous semiconductor layer has a density of localized states higher than those of the second amorphous semiconductor layers. The second amorphous semiconductor layers have band gaps larger than that of the first amorphous semiconductor layer.
A thin-film semiconductor device comprising:
A method for fabricating a thin-film semiconductor device, the method comprising:
Dependencies are inferred from the claim text.