Semiconductor tunnel FET transistor device
AssigneeKabushiki Kaisha Toshiba
InventorTakahisa Kanemura
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Abstract
In one embodiment, a semiconductor device includes a substrate, and a source region of a first conductivity type disposed on a surface of the substrate. The device further includes a tunnel insulator disposed on the source region, and an impurity semiconductor layer of a second conductivity type disposed on the tunnel insulator, the second conductivity type being different from the first conductivity type. The device further includes a gate insulator disposed on the impurity semiconductor layer, and a gate electrode disposed on the gate insulator. The device further includes a drain region of the second conductivity type disposed on the substrate so as to be separated from the impurity semiconductor layer, or disposed on the substrate as a portion of the impurity semiconductor layer.
Claims20
A semiconductor device comprising:
- a substrate;
- a source region of a first conductivity type disposed on a surface of the substrate;
- a tunnel insulator disposed on the source region;
- an impurity semiconductor layer of a second conductivity type disposed on the tunnel insulator so as to be separated from the source region via the tunnel insulator, the second conductivity type being different from the first conductivity type;
- a gate insulator disposed on the impurity semiconductor layer;
- a gate electrode disposed on the gate insulator;
- and
- a drain region of the second conductivity type disposed on the substrate so as to be separated from and electrically connected to the impurity semiconductor layer via a semiconductor layer, or disposed on the substrate as a portion of the impurity semiconductor layer.
A semiconductor device comprising:
- a substrate;
- a source layer of a first conductivity type disposed on the substrate;
- a tunnel insulator, an impurity semiconductor layer of a second conductivity type, a gate insulator, and a gate electrode which are sequentially disposed on a side surface of the source layer, the second conductivity type being different from the first conductivity type, and the impurity semiconductor layer being separated from the source layer via the tunnel insulator;
- and
- a drain layer of the second conductivity type disposed on a surface of the substrate so as to be separated from and electrically connected to the impurity semiconductor layer via a semiconductor layer.
Dependencies are inferred from the claim text.