Nonvolatile memory cells and methods of forming nonvolatile memory cell

A method of forming a nonvolatile memory cell, comprising:

• forming a first electrode comprising a first current conductive material and a second current conductive material different in composition from the first current conductive material within an opening in a dielectric material, at least a portion of the second current conductive material being laterally surrounded by the first current conductive material;
• elevationally etching the first current conductive material and elevationally and laterally etching the second current conductive material, the first current conductive material being etched at a greater rate than the second current conductive material to leave a neck of second current conductive material projecting elevationally outward from the first current conductive material, the lateral etching of the second current conductive material forming a pair of second conductive material shoulders that are laterally inward of the first current conductive material, the shoulders in combination being wider than the neck, a top surface of the shoulders being coplanar with a top surface of the first current conductive material;
• forming a programmable region over the first current conductive material and over the projecting second current conductive material of the first electrode, the programmable region contacting a top surface and sidewalls of the neck of the second current conductive material;
• and
• forming a second electrode over the programmable region.