Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device
AssigneeNEC Corporation
InventorsMunehiro Tada, Koichiro Okamoto, Toshitsugu Sakamoto, Hiromitsu Hada
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Abstract
A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
Claims20
A variable resistance element, comprising:
- first and second electrodes;
- and
- an ion conduction layer interposed between the first and second electrodes;
- wherein,
- the ion conduction layer contains an organic oxide containing at least oxygen and carbon;
- a carbon concentration distribution in the ion conduction layer being such that the carbon concentration in an area of the ion conduction layer closer to the first electrode is greater than that in an area thereof closer to the second electrode.
A method for manufacturing a variable resistance element having a layered structure of a first electrode, an ion conduction layer containing an organic oxide, and a second electrode, layered in this order, comprising:
- a plasma CVD process for forming the ion conduction layer containing the organic oxide, the plasma CVD process employing a vapor of an organic silica compound and an inert gas for dilution, the organic silica compound including a skeleton composed by at least silicon, carbon and oxygen;
- wherein
- the plasma CVD process includes varying, either continuously or stepwise, the high frequency power for plasma initiation or the partial pressure of the vapor of the organic silica compound supplied, as from a time of plasma ignition.
A variable resistance element, comprising:
- first and second electrodes;
- and
- an ion conduction layer interposed between the first and second electrodes;
- wherein,
- the ion conduction layer contains an organic oxide containing at least oxygen and carbon;
- a carbon concentration distribution in the ion conduction layer being such that the carbon concentration in an area of the ion conduction layer closer to the first electrode is greater than that in an area thereof closer to the second electrode;
- the carbon concentration distribution in the ion conduction layer decreases continuously or stepwise from the area on the first electrode side towards the area on the second electrode side:
- and
- the ion conduction layer is a film containing at least silicon as element in addition to oxygen and carbon.
Dependencies are inferred from the claim text.