Filamentary based non-volatile resistive memory device and method

A resistive memory device comprising:

• a first metallic layer comprising a source of positive metallic ions;
• a switching media having an upper surface and a lower surface, wherein the upper surface is adjacent to the first metallic layer, wherein the switching media comprises conductive filaments comprising positive metallic ions from the source of positive metallic ions formed from the upper surface towards the lower surface;
• a semiconductor substrate;
• a second metallic layer disposed above the semiconductor substrate;
• a non-metallic conductive layer disposed above and in contact with the second metallic layer;
• and
• an interface region disposed between and in contact with the non-metallic conductive layer and the lower surface of the switching media, wherein the interface region is associated with a negative ionic charge, wherein a dopant concentration of the interface region is higher than a dopant concentration of the non-metallic conductive layer, wherein the interface region is configured to increase retention time of the conductive filaments formed from the upper surface towards the lower surface.