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US 8,796,657 B2Granted
Memory element and memory device
AssigneeSony Corporation
InventorsShuichiro Yasuda, Tetsuya Mizuguchi, Masayuki Shimuta, Katsuhisa Aratani, Kazuhiro Ohba
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Abstract
There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm.
Claims11
A memory element, comprising:
- a first electrode, a memory layer, and a second electrode in this order, wherein
- the memory layer includes
- a resistance change layer disposed on the first electrode side, and
- an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm.
1 more element
A memory element, comprising:
- a first electrode, a memory layer, and a second electrode in this order, wherein
- the memory layer includes
- a resistance change layer disposed on the first electrode side,
- an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm;
- and
- an intermediate layer between the resistance change layer and the ion source layer, the intermediate layer including tellurium (Te).
3 more elements
A memory device, comprising:
- a plurality of memory elements each including a first electrode, a memory layer, and a second electrode in this order;
- and
- a pulse application unit applying a voltage or current pulse selectively to the memory elements,
- wherein,
- the memory layer includes (a) a resistance change layer disposed on the first electrode side, and (b) an ion source layer provided on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm.
2 more elements
Dependencies are inferred from the claim text.