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US 8,796,656 B2Granted
Oxide based memory
AssigneeMicron Technology, Inc.
InventorsD.V. Nirmal Ramaswamy, Gurtej Sandhu
Life of this patent
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Abstract
Methods, devices, and systems associated with oxide based memory are described herein. In one or more embodiments, a method of forming an oxide based memory cell includes forming a first electrode, forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material and a second portion of the tunnel barrier includes a second material, forming an oxygen source, and forming a second electrode.
Claims20
A method of foaming an oxide based memory cell, comprising:
- forming a first electrode;
- forming an oxygen source, wherein a first number of oxygen ions are present in the oxygen source;
- forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material that is adjacent to the first electrode and a second portion of the tunnel barrier includes a second material that is adjacent to the oxygen source, wherein an activation energy for oxygen ion diffusion of the first material is higher than an activation energy for oxygen ion diffusion of the second material, and wherein a second number of oxygen ions from the oxygen source are present in the first and second portions of the tunnel barrier;
- and forming a second electrode.
1 more element
A method of forming an oxide based memory cell, comprising:
- forming a first electrode;
- forming an oxygen source, wherein a first number of oxygen ions are present in the oxygen source;
- forming a tunnel barrier, wherein the tunnel barrier includes a first material adjacent to the first electrode with a first activation energy for oxygen ion diffusion and a second material adjacent to the oxygen source with a second activation energy for oxygen ion diffusion, wherein the first activation energy for oxygen ion diffusion is higher than the second activation energy for oxygen ion diffusion, and wherein a second number of oxygen ions from the oxygen source are present in the first and second materials of the tunnel barrier;
- and forming a second electrode.
1 more element
A memory cell, comprising:
- a first electrode;
- an oxygen source, wherein the oxygen source includes a first number of oxygen ions;
- a tunnel barrier, wherein the tunnel barrier includes a second number of oxygen ions that originated from the oxygen source, wherein a first portion of the tunnel barrier is adjacent to the first electrode and includes a first material, wherein a ˜ a second portion of the tunnel barrier is adjacent to the oxygen source and includes a second material, and wherein an activation energy for oxygen ion diffusion of the first material is higher than an activation energy for oxygen ion diffusion of the second material;
- and
- wherein the second number of oxygen ions from the oxygen source are present in the first and second portions of the tunnel barrier;
- and
- a second electrode.
4 more elements
A memory device, comprising:
- an array of memory cells;
- and
- circuitry for control and/or access of the array;
- wherein at least one memory cell of the array includes:
- a first electrode;
- an oxygen source, wherein the oxygen source includes a first number of oxygen ions;
- a tunnel barrier, wherein the tunnel barrier includes a second number of oxygen ions that originated from the oxygen source, wherein a first portion of the tunnel barrier is adjacent to the first electrode and includes a first material, wherein a second portion of the tunnel barrier is adjacent to the oxygen source and includes a second material ˜ and wherein an activation energy for oxygen ion diffusion of the first material is higher than an activation energy for oxygen ion diffusion of the second material;
- and
- wherein the second number of oxygen ions from the oxygen source are present in the first and second portions of the tunnel barrier;
- and
- a second electrode.
8 more elements
Dependencies are inferred from the claim text.