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US 8,796,537 B2Granted
Carbon nanotube based solar cell
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsHai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Abstract
A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode. The back electrode is located on and electrically connected to a lower surface of the silicon substrate. A number of cavities are formed on an upper surface of the silicon substrate. The doped silicon layer is located on the inside surface of the cavities. The upper electrode is located on the upper surface of the silicon substrate. The upper electrode includes a carbon nanotube structure.
Claims20
A solar cell comprising:
- a silicon substrate having an upper surface and a lower surface, the upper surface defining a plurality of cavities, each of the plurality of cavities having an inside surface, wherein the inside surface connects to the upper surface;
- a back electrode adjacent to the lower surface of the silicon substrate, and electrically connected to the silicon substrate;
- a doped silicon layer located on the inside surface;
- an upper electrode located on the upper surface of the silicon substrate, wherein the upper electrode covers the plurality of cavities and is suspended above the inside surface of each of the plurality of cavities, and the upper electrode comprises a carbon nanotube structure;
- and
- a plurality of metal layers is located between the upper surface of the silicon substrate and the upper electrode, and the plurality of metal layers are in direct contact with the upper surface, the upper electrode, and the doped silicon layer.
3 more elements
A solar cell comprising:
- a silicon substrate having an upper surface and a lower surface, the upper surface defining a plurality of cavities, each of the plurality of cavities having an inside surface that is connected to the upper surface;
- a back electrode adjacent to the lower surface of the silicon substrate and electrically connected to the silicon substrate;
- a plurality of doped silicon layers, each of the plurality of doped silicon layers are located on the inside surface of each of the plurality of cavities;
- a plurality of metal layers located between the upper surface of the silicon substrate and an upper electrode;
- and
- a carbon nanotube film located on the plurality of metal layers and suspended above the inside surface of each of the plurality of cavities, the carbon nanotube film comprising a plurality of carbon nanotubes aligned along substantially a same direction and substantially parallel to the upper surface of the silicon substrate;
- wherein the plurality of metal layers are in direct contact with the upper surface, the carbon nanotube film, and the doped silicon layer to form a plurality of heterojunctions between the upper surface of the silicon substrate and the carbon nanotube film.
4 more elements
A solar cell comprising:
- a P-type single crystal silicon substrate having an upper surface and a lower surface, the upper surface defining a plurality of cavities, and each of the plurality of cavities having an inside surface that is connected to the upper surface;
- a back electrode that is adjacent to the lower surface of the silicon substrate and electrically connected to the P-type single crystal silicon substrate;
- a plurality of N-type doped silicon layers, and each of the plurality of N-type doped silicon layers are located on the inside surface of each of the plurality of cavities;
- a plurality of metal layers located between the upper surface of the P-type single crystal silicon substrate and an upper electrode;
- and
- a carbon nanotube film located on the plurality of metal layers and suspended above the inside surface of each of the plurality of cavities, and the carbon nanotube film comprises a plurality of carbon nanotubes aligned along substantially a same direction and substantially parallel to the upper surface of the P-type single crystal silicon substrate;
- wherein a thickness of the P-type single crystal silicon substrate is about 200 microns to about 300 microns, the plurality of metal layers are in direct contact with the upper surface, the carbon nanotube film, and the N-type doped silicon layer to form a plurality of heterojunctions between the upper surface of the silicon substrate and the carbon nanotube film.
4 more elements
Dependencies are inferred from the claim text.