Extremely low resistance composition and methods for creating same

A method comprising:

• bonding a modifying material to a face of YBCO, wherein the face of the YBCO is not substantially perpendicular to a c-axis of the YBCO, wherein the modifying material comprises an element selected from the group consisting of:
• chromium, rhodium, beryllium, gallium, selenium, and vanadium.

A composition comprising:

• a first layer comprising an HTS perovskite material;
• and
• a second layer comprising a modifying material, wherein the modifying material of the second layer is bonded to a face of the HTS perovskite material of the first layer, wherein the face of the HTS perovskite material is not substantially perpendicular to a c-axis of the HTS perovskite material, wherein the modifying material is a conductive material that bonds easily with oxygen.

A composition comprising:

• an HTS perovskite material;
• and
• a modifying material bonded to a face of the HTS perovskite material, wherein the face of the HTS perovskite material is not substantially perpendicular to a c-axis of the HTS perovskite material, wherein the composition operates in an ELR state at a temperature greater than that of the HTS perovskite material.

A method comprising:

• bonding a modifying material to a face of an HTS perovskite material, wherein the face of the HTS perovskite material is not substantially perpendicular to a c-axis of the HTS perovskite material, wherein the modifying material comprises an element selected from the group consisting of:
• chromium, rhodium, beryllium, gallium, selenium, and vanadium.