Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions

A method for processing at least one section of a thin film sample on a substrate, comprising the steps of:

• (a) controlling an irradiation beam generator to emit successive irradiation beam pulses at a predetermined repetition rate;
• (b) shaping each of the irradiation beam pulses to define at least one line-type beam pulse, wherein a profile of each of the line-type beam pulses includes a top portion, a leading portion and a trailing portion, wherein the top portion of each of the line-type beam pulses has an energy density which is below a complete melting threshold, the at least one line-type beam pulse being provided for impinging the film sample;
• (c) irradiating a first portion of the film sample with at least the top portion of a first one of the line-type beam pulses, to at least partially melt the first portion, the irradiated first portion being allowed to resolidify and crystallize to form approximately uniform areas therein, and
• (d) after step (c), irradiating a second portion of the film sample with at least the top portion of a second one of the line-type beam pulses to at least partially melt the second portion, the irradiated second portion being allowed to resolidify and crystallize to form approximately uniform areas therein,
• wherein an emission of the second one of the line-type beam pulses immediately follows an emission of the first one of the line-type beam pulses,
• wherein at least one section of the first portion of the film sample, corresponding to at least the top portion of the first one of the line-type beam pulses, is prevented from being irradiated by the trailing portion of the second one of the line-type beam pulses.

A method for processing at least one section of a thin film sample on a substrate, comprising the steps of:

• (a) controlling an irradiation beam generator to emit successive irradiation beam pulses at a predetermined repetition rate;
• (b) shaping each of the irradiation beam pulses to define at least one line-type beam pulse, wherein a profile of each of the line-type beam pulses includes a top portion, a leading portion and a trailing portion, wherein the top portion of each of the line-type beam pulses has an energy density which is above a complete melting threshold, the at least one line-type beam pulse being provided for impinging the film sample;
• (c) irradiating a first portion of the film sample with at least the top portion of a first one of the line-type beam pulses, to at least partially melt the first portion, the irradiated first portion being allowed to resolidify and crystallize to form approximately uniform areas therein, and
• (d) after step (c), irradiating a second portion of the film sample with at least the top portion of a second one of the line-type beam pulses to at least partially melt the second portion, the irradiated second portion being allowed to resolidify and crystallize to form approximately uniform areas therein,
• wherein an emission of the second one of the line-type beam pulses immediately follows an emission of the first one of the line-type beam pulses,
• wherein at least one section of the first portion of the film sample, corresponding to at least the top portion of the first one of the line-type beam pulses, is prevented from being irradiated by the trailing portion of the second one of the line-type beam pulses
• (e) receiving data associated with locations on the film sample to be irradiated;
• and
• (f) after step (c) and before step (d), translating the film sample for a particular distance with respect to an impingement by the beam pulses based on the received data.

A method for processing at least one section of a thin film sample on a substrate, comprising the steps of:

• (a) controlling an irradiation beam generator to emit successive irradiation beam pulses at a predetermined repetition rate;
• (b) shaping each of the irradiation beam pulses to define at least one line-type beam pulse, wherein a profile of each of the line-type beam pulses includes a top portion, a leading portion and a trailing portion, wherein the top portion of each of the line-type beam pulses has an energy density which is below a complete melting threshold, the at least one line-type beam pulse being provided for impinging the film sample;
• (c) irradiating a first portion of the film sample with at least the top portion of a first one of the line-type beam pulses, to at least partially melt the first portion, the irradiated first portion being allowed to resolidify and crystallize to form approximately uniform areas therein, and
• (d) after step (c), irradiating a second portion of the film sample with at least the top portion of a second one of the line-type beam pulses to at least partially melt the second portion, the irradiated second portion being allowed to resolidify and crystallize to form approximately uniform areas therein,
• wherein an emission of the second one of the line-type beam pulses immediately follows an emission of the first one of the line-type beam pulses,
• wherein at least one section of the first portion of the film sample, corresponding to at least the top portion of the first one of the line-type beam pulses, is prevented from being irradiated by the trailing portion of the second one of the line-type beam pulses
• (e) receiving data associated with locations on the film sample to be irradiated;
• and
• (f) after step (c) and before step (d), translating the film sample for a particular distance with respect to an impingement by the beam pulses based on the received data.