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US 8,796,149 B1Granted
Collector-up bipolar junction transistors in BiCMOS technology
AssigneeInternational Business Machines Corporation
InventorsJames W. Adkisson, David L. Harame, Qizhi Liu
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Abstract
Fabrication methods, device structures, and design structures for a bipolar junction transistor. An emitter is formed in a device region defined in a substrate. An intrinsic base is formed on the emitter. A collector is formed that is separated from the emitter by the intrinsic base. The collector includes a semiconductor material having an electronic bandgap greater than an electronic bandgap of a semiconductor material of the device region.
Claims10
A method of fabricating a bipolar junction transistor, the method comprising:
- forming an emitter in a device region comprised of a first semiconductor material having a first electronic bandgap;
- forming an intrinsic base layer on the emitter;
- and
- after the emitter is formed, forming a collector separated from the emitter by the intrinsic base layer,
- wherein the collector is comprised of a second semiconductor material having a second electronic bandgap greater than the first electronic bandgap.
2 more elements
Dependencies are inferred from the claim text.