Semiconductor device and method of forming RDL along sloped side surface of semiconductor die for z-direction interconnect

A method of making a semiconductor device, comprising:

• singulating a plurality of first semiconductor die each including a sloped side surface and a back surface opposite an active surface;
• forming a redistribution layer (RDL) contacting the back surface of the first semiconductor die and extending along the sloped side surface of the first semiconductor die;
• depositing a first encapsulant over the sloped side surface and RDL;
• and
• forming an interconnect structure over the active surface of the first semiconductor die and the RDL with the RDL being electrically connected to the interconnect structure.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including,
• (a) an active surface,
• (b) a back surface smaller than and opposite the active surface, and
• (c) a sloped side surface between the active surface and the back surface;
• disposing the first semiconductor die over a carrier;
• forming a redistribution layer (RDL) including an insulating layer and a first conductive layer and extending from the back surface of the first semiconductor die along the sloped side surface of the first semiconductor die to the carrier;
• removing the carrier;
• and
• forming an interconnect structure over the active surface of the first semiconductor die and RDL with the RDL being electrically connected to the interconnect structure.

A method of making a semiconductor device, comprising:

• singulating a semiconductor wafer to provide a first semiconductor die including a sloped side surface;
• forming a conductive layer over the sloped side surface and including a segment that is coplanar with an active surface of the first semiconductor die;
• and
• forming an interconnect structure over the first semiconductor die and electrically connected to the conductive layer.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including a sloped side surface and a back surface opposite an active surface;
• disposing a second semiconductor die over the first semiconductor die including a sloped side surface of the second semiconductor die aligned with the sloped side surface of the first semiconductor die;
• forming a redistribution layer (RDL) contacting an active surface of the second semiconductor die and extending along the sloped side surfaces of the first and second semiconductor die;
• depositing an encapsulant over the sloped side surfaces of the first and second semiconductor die and the RDL;
• and
• forming an interconnect structure over the active surface of the first semiconductor die and the RDL with the RDL being electrically connected to the interconnect structure.