Semiconductor device and manufacturing method thereof
AssigneePS4 Luxco S.a.r.l.
InventorsSatoru Sugiyama, Yuuta Nishioka
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Abstract
A semiconductor device is provided, which includes an annular insulation separation portion penetrating a semiconductor substrate, and an electrode penetrating the semiconductor substrate in a region surrounded by the annular insulation separation portion, wherein the insulation separation portion includes at least a first film that gives compressive stress in a depth direction on the side of a substrate, a second film that gives tensile stress in the depth direction is formed on the first film, and film thicknesses of the first and second films are adjusted so that the compressive stress and the tensile stress are almost balanced.
Claims18
A method of manufacturing a semiconductor device comprising:
- forming a trench on a main surface of a semiconductor substrate;
- thermally oxidizing silicon to form a first silicon oxide film in the trench;
- depositing a second silicon oxide film on the main surface of the semiconductor substrate;
- and
- reducing a thickness of the semiconductor substrate from a back surface that is located on a opposite side of the main surface to expose a bottom of the trench, wherein:
- the first silicon oxide film gives a compressive stress to the semiconductor substrate in a depth direction;
- the second silicon oxide film gives a tensile stress to the semiconductor substrate in the depth direction;
- and
- the second silicon oxide film has the film thickness so that the tensile stress is substantially balanced out by the compressive stress of the first silicon oxide film.
A method of manufacturing a semiconductor device comprising:
- forming a hole on a main surface of a semiconductor substrate, the semiconductor substrate including silicon;
- forming a first silicon oxide film on a sidewall of the hole by thermally oxidizing the silicon of the side wall of the hole;
- depositing a second silicon oxide film on the sidewall of the hole;
- and
- reducing a thickness of the semiconductor substrate from a back surface that is located on an opposite side of the main surface to expose a bottom of the hole, wherein:
- the first silicon oxide film gives a compressive stress to the semiconductor substrate in a depth direction;
- the second silicon oxide film gives a tensile stress to the semiconductor substrate in the depth direction;
- and
- the second silicon oxide film has the film thickness so that the tensile stress is substantially balanced out by the compressive stress of the first silicon oxide film.
Dependencies are inferred from the claim text.