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AssigneeAdvanced Technology Materials, Inc.
InventorsEdward E. Jones, Sharad N. Yedave, Ying Tang, Barry Lewis Chambers, Robert Kaim, Joseph D. Sweeney, Oleg Byl, Peng Zou
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An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
An ion implantation system, comprising:
An ion implantation system, comprising:
A method of implanting ions in a substrate, comprising supplying gas to an ion source chamber for generation of ionized dopant species, and implanting ionized dopant species in the substrate, wherein the gas comprises at least one boron compound selected from among B2F4, B5H9, B3F5, BHF2, and BH2F.
A method of implanting ions in a substrate, comprising Supplying gas to an ion source chamber for generation of ionized dopant species, and implanting ionized dopant species in the substrate, wherein the gas comprises B2F4 and B2H6.
Dependencies are inferred from the claim text.