Method of manufacturing semiconductor device
AssigneePS4 Luxco S.a.r.l.
InventorKoji Taniguchi
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming an insulating isolation portion in a groove of a substrate, forming a projection portion in which an upper portion of the insulating isolation portion projects from a principal surface of the substrate, forming a sidewall spacer covering a side surface of the projection portion and part of the principal surface of the substrate along the side surface of the projection portion, and forming a first trench in the substrate by etching the substrate using the sidewall spacer as a mask.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an isolation portion in a groove of a substrate;
- forming a projection portion in which an upper portion of the isolation portion projects from a surface of the substrate;
- forming a sidewall spacer covering a side surface of the projection portion and part of the surface of the substrate along the side surface of the projection portion;
- and
- forming a first trench in the substrate by etching the substrate using the sidewall spacer as a mask.
A method of manufacturing a semiconductor device, the method comprising:
- forming isolation portions in grooves of a substrate;
- forming at least a pair of projection portions in which upper portions of the isolation portions project from a surface of the substrate;
- forming sidewall spacers covering side surfaces of the projection portions and part of the surface of the substrate along the side surfaces of the projection portions;
- and
- forming a first trench in the substrate by etching the substrate using the sidewall spacers as a mask,
- wherein the forming of the sidewall spacers includes forming a window to expose the surface of the substrate between the sidewall spacers of the at least the pair of projection portions facing each other.
A method of manufacturing a semiconductor device, the method comprising:
- forming isolation portions in grooves of a substrate;
- forming at least a pair of projection portions in which upper portions of the isolation portions project from the surface of the substrate;
- forming sidewall spacers, a belt-like pattern and windows in the same process step, the sidewall spacers covering each side surface of the projection portions and part of the surface of the substrate along the side surface of the projection portions, the belt-like pattern arranged between the sidewall spacers of at least the pair of projection portions facing each other, the window exposing the surface of the substrate between the sidewall spacer and the belt-like pattern;
- and
- forming a first trench in the substrate by etching using the sidewall spacers and the belt-like pattern as a mask.
Dependencies are inferred from the claim text.