Method of fabricating display device having a pixel region and a circuit region over the same substrate
AssigneeSamsung Display Co., Ltd.
InventorsEui-Hoon Hwang, Deuk-Jong Kim
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Abstract
A method of fabricating a display device is provided. The method includes providing a substrate having a pixel region and a circuit region located at the periphery of the pixel region. A first semiconductor layer and a second semiconductor layer are formed on the pixel region and on the circuit region, respectively. The first semiconductor layer may be selectively surface treated to increase the density of lattice defects in a surface of the first semiconductor layer.
Claims15
A method of fabricating a display device, comprising:
- providing a substrate having a pixel region and a circuit region located at a periphery of the pixel region;
- forming a first semiconductor layer and a second semiconductor layer on the pixel region and on the circuit region, respectively;
- and
- performing a plasma surface treatment on the entire first semiconductor layer without performing the plasma surface treatment on the second semiconductor layer, wherein the plasma surface treatment increases a density of lattice defects of a surface of the first semiconductor layer.
A method of fabricating a display device, comprising:
- providing a substrate having a pixel region and a circuit region located at a periphery of the pixel region;
- forming a first semiconductor layer and a second semiconductor layer on the pixel region and on the circuit region, respectively;
- and
- performing a plasma surface treatment on the entire first semiconductor layer without performing the plasma surface treatment on the second semiconductor layer with inert gas plasma, wherein the plasma surface treatment increases a density of lattice defects of a surface of the first semiconductor layer.
A method of fabricating a display device, comprising:
- providing a substrate having a pixel region and a circuit region located at a periphery of the pixel region;
- forming a first semiconductor layer and a second semiconductor layer on the pixel region and on the circuit region, respectively;
- and
- performing a plasma surface treatment on only the entire first semiconductor layer to increase density of lattice defects of a surface of the first semiconductor layer.
Dependencies are inferred from the claim text.