High throughput epitaxial lift off for flexible electronics
AssigneeInternational Business Machines Corporation
InventorsCheng-Wei Cheng, Kuen-Ting Shiu
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Abstract
A method of removing a semiconductor device layer from an underlying base substrate is provided in which a sacrificial phosphide-containing layer is formed between a semiconductor device layer and a base substrate. In some embodiments, a semiconductor buffer layer can be formed on an upper surface of the base substrate prior to forming the sacrificial phosphide-buffer layer. The resultant structure is then etched utilizing a non-HF etchant to release the semiconductor device layer from the base semiconductor substrate. After releasing the semiconductor device layer from the base substrate, the base substrate can be re-used.
Claims24
A method of releasing a semiconductor device layer from a base substrate, said method comprising:
- forming a sacrificial phosphide-containing layer on an upper surface of a base substrate;
- forming a semiconductor device layer on an upper surface of the sacrificial phosphide-containing layer;
- and
- removing the sacrificial phosphide-containing layer from between the semiconductor device layer and the base substrate, wherein said removing comprises etching with a non-HF containing etchant, and wherein during said removing the sacrificial phosphide-containing layer an upper surface of the semiconductor device layer that is opposite a bottom surface of the semiconductor device layer that is in contact with said upper surface of said sacrificial phosphide-containing layer is bare.
A method of releasing a semiconductor device layer from a base substrate, said method comprising:
- forming a semiconductor buffer layer on an upper surface of a base substrate;
- forming a sacrificial phosphide-containing layer on an upper surface of the semiconductor buffer layer;
- forming a semiconductor device layer on an upper surface of the sacrificial phosphide-containing layer;
- and
- removing the sacrificial phosphide-containing layer located between the semiconductor device layer and the base substrate, wherein said removing comprising etching with a non-HF containing etchant, and wherein during said removing the sacrificial phosphide-containing layer an upper surface of the semiconductor device layer that is opposite a bottom surface of the semiconductor device layer that is in contact with said upper surface of said sacrificial phosphide-containing layer is bare.
Dependencies are inferred from the claim text.