Nanoelectronic structure and method of producing such
AssigneeQuNano AB
InventorsLars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Abstract
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Claims6
A method of fabricating a semiconductor device, comprising a first growth of nanoelements in a first growth mode promoting nanoelement growth and a second selective growth of volume elements in a second growth mode promoting radial growth, comprising the steps of:
- forming a catalyst island on a substrate;
- growing the nanoelement from the catalyst island, the growth parameters being adjusted for catalytic semiconductor nanoelement growth;
- depositing a mask material around the nanoelement;
- partially etching back the mask material to expose a part of the nanoelement;
- and
- selectively epitaxially growing a semiconductor volume element on the exposed part of the nanoelement, the growth parameters being adjusted to provide radial growth.
Dependencies are inferred from the claim text.