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US 8,796,114 B2Granted
Method for slicing a substrate wafer
AssigneeOSRAM Opto Semiconductors GmbH
InventorRalph Wagner
Life of this patent
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Abstract
A method for slicing a monocrystalline semiconductor layer (116) from a semiconductor single crystal (100) comprising: providing a semiconductor single crystal (100) having a uniform crystal structure; locally modifying the crystal structure within a separating plane (104) in the semiconductor single crystal (100) into an altered microstructure state by means of irradiation using a laser (106); and removing the modified separating plane (104) by means of selective etching.
Claims14
A method for slicing a monocrystalline semiconductor layer from a semiconductor single crystal comprising:
- providing a semiconductor single crystal having a uniform crystal structure;
- locally modifying the crystal structure within a separating plane in the semiconductor single crystal into an altered microstructure state by means of irradiation using a laser;
- and
- removing the modified separating plane by means of selective etching to produce a monocrystalline semiconductor layer.
1 more element
Dependencies are inferred from the claim text.