Stacked layers of nitride semiconductor and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsHideto Sugawara, Masaaki Onomura
Life of this patent
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Abstract
According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.
Claims20
A method for manufacturing a semiconductor light emitting device, comprising:
- forming a plurality of protrusions on a major surface of a substrate, the substrate not including a nitride semiconductor;
- forming a single crystal layer directly on the major surface of the substrate to cover the protrusions and to cause a crack in the single crystal layer;
- and forming a nitride semiconductor layer on the single crystal layer, the plurality of the protrusions being formed in a planar pattern, the protrusions extending in a prescribed crystal orientation of the substrate, and extending in a plurality of directions equivalent to the prescribed crystal orientation.
A method for manufacturing a semiconductor light emitting device, comprising:
- forming a plurality of protrusions on a major surface of a substrate, the substrate not including a nitride semiconductor;
- forming a single crystal layer directly on the major surface of the substrate to cover the protrusions and to cause a crack in the single crystal layer;
- and forming a nitride semiconductor layer on the single crystal layer, the plurality of the protrusions being formed in an island-like pattern, the plurality of the island-like protrusions being arranged in a prescribed crystal orientation of the substrate, and the plurality of the island-like protrusions being arranged in a plurality of directions equivalent to prescribed crystal orientation.
A method for manufacturing a semiconductor light emitting device, comprising:
- forming a protrusion on a major surface of a substrate, the substrate not including a nitride semiconductor;
- forming a single crystal layer directly on the major surface of the substrate to cover the protrusion and to cause a crack in the single crystal layer, the single crystal layer being an AlxGa1-xN(0.8<x<1) layer;
- and
- forming a nitride semiconductor layer on the single crystal layer.
A method for manufacturing a semiconductor light emitting device, comprising:
- forming a protrusion on a major surface of a substrate, the substrate not including a nitride semiconductor;
- forming a single crystal layer directly on the major surface of the substrate to cover the protrusion and to cause a crack in the single crystal layer;
- and forming a nitride semiconductor layer on the single crystal layer, the nitride semiconductor layer including an undoped layer provided directly on the single crystal layer.
Dependencies are inferred from the claim text.