Methods for fabricating semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKevin Ahn, Bo-Un Yoon, Jeong-Nam Han
Life of this patent
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Abstract
Provided are methods for fabricating a semiconductor device. The methods include forming a hard mask pattern on a semiconductor substrate, forming a first trench having a first width and a second trench having a second width on the semiconductor substrate using the hard mask pattern as a mask, forming an oxide film on the hard mask pattern and the first and second trenches, forming first and second isolation films on the first and second trenches by planarizing the oxide film until the hard mask pattern is exposed, and etching the first isolation film by a first thickness by performing dry cleaning on the semiconductor substrate and etching the second isolation film by a second thickness different from the first thickness.
Claims10
A method for fabricating a semiconductor device, the method comprising:
- forming a first isolation film having a first width and a second isolation film having a second width on a semiconductor substrate having a buffer oxide film pattern and a hard mask film pattern;
- isotropically etching the first and second isolation films by first and second thicknesses different from each other in the course of performing a dry cleaning process on the semiconductor substrate;
- etching the first and second isolation films by third and fourth thicknesses different from each other in the course of exposing an active region of the semiconductor substrate by removing the buffer oxide film pattern and the hard mask film pattern;
- and
- forming a metal gate on the exposed active region of the semiconductor substrate.
Dependencies are inferred from the claim text.