Isolation trenches
AssigneeSTMicroelectronics S.r.l.
InventorsDaniele Merlini, Domenico Giusti, Fabrizio Fausto Renzo Toia, Federica Ronchi
Life of this patent
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Abstract
A method is for the formation of at least one filled isolation trench having a protective cap in a semiconductor layer, and a semiconductor device with at least one filled isolation trench having a protective cap. The method allows obtaining, in an easy way, filled isolation trenches exhibiting excellent functional and morphological properties. The method therefore allows the obtainment of effective filled isolation trenches which help provide elevated, reliable and stable isolation properties.
Claims33
A method of making a semiconductor device comprising:
- forming a filled isolation trench in a semiconductor layer comprising forming a first cavity in the semiconductor layer, and filling the first cavity with insulating material;
- forming a filled additional isolation trench in the semiconductor layer adjacent the filled isolation trench and separated therefrom by a portion of semiconductor material to be coupled to a reference voltage, the forming comprising forming a first additional cavity in the semiconductor layer, and filling the first additional cavity with insulating material;
- forming a second cavity in an upper portion of the filled isolation trench, and depositing a material in the second cavity to form a protective cap over the filled isolation trench;
- forming a second additional cavity in an upper portion of the filled additional isolation trench, and depositing a material in the second additional cavity to form a protective cap over the filled additional isolation trench;
- and
- forming protection masks over the protective caps formed in the filled isolation trench and in the filled additional isolation trench, and etching the semiconductor layer.
A method of making a semiconductor device comprising:
- forming a filled isolation trench in a semiconductor layer;
- forming a cavity in an upper portion of the filled isolation trench;
- forming a protective cap over the upper portion of the filled isolation trench via High Density Plasma deposition to thereby inhibit formation of interfaces in the protective cap;
- forming an additional filled isolation trench adjacent the filled isolation trench and separated therefrom by a portion of semiconductor material to be coupled to a reference voltage;
- and
- forming an additional protective cap over the additional filled isolation trench.
A semiconductor device comprising:
- a semiconductor layer and a filled isolation trench therein;
- a protective cap on an upper portion of said filled isolation trench and being devoid of interfaces;
- an additional filled isolation trench adjacent the filled isolation trench and separated therefrom by a portion of semiconductor material to be coupled to a reference voltage;
- and
- an additional protective cap over the additional filled isolation trench.
Dependencies are inferred from the claim text.