Method and apparatus for preparing polysilazane on a semiconductor wafer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYou-Hua Chou, Chih-Tsung Lee, Min-Hao Hong, Ming-Huei Lien, Chih-Jen Wu, Chen-Ming Huang
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Abstract
A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
Claims19
A method for depositing polysilazane on a semiconductor wafer, comprising steps of:
- disposing silazane onto the semiconductor wafer, wherein the semiconductor wafer includes a trench structure, and the disposing step comprises a substep of fully filling the trench structure with the silazane for forming a shallow trench isolation structure and wherein the silazane is in a silazane solution with a solvent prior to and at least partially during being disposed onto the semiconductor wafer;
- and
- heating the silazane to form the polysilazane on the semiconductor wafer.
An apparatus for preparing polysilazane on a semiconductor wafer, comprising:
- a silazane supplying device for dispensing silazane in a liquid silazane solution to fully fill trenches located within the semiconductor wafer;
- and
- a polymerizing heater for heating the silazane to form the polysilazane on the semiconductor wafer.
A method for depositing a polysilazane on a semiconductor wafer, comprising steps of:
- disposing a silazane solution into a deposition chamber to fully fill a trench located on the semiconductor wafer;
- and
- causing the silazane to form the polysilazane on the semiconductor wafer.
Dependencies are inferred from the claim text.