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US 8,796,101 B2Granted
Memory device
AssigneeOvonyx, Inc.
InventorsWolodymyr Czubatyj, Regino Sandoval
Life of this patent
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Abstract
A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
Claims11
A method of making a memory device comprising:
- providing a first insulator;
- configuring a hole through said first insulator;
- providing a first conductive layer that conforms to the inner periphery of said hole;
- configuring a portion of said first conductive layer to provide a first electrode, said first electrode being conformal to said periphery of said hole;
- providing a phase-change material over said first insulator and in electrical communication with said first electrode, said phase-change material having a lower surface, said lower surface including a radially-inwardly facing surface portion and an arcuate-shaped, downwardly-facing portion;
- providing a second insulator over said phase-change material and said hole;
- removing a portion of said second insulator to expose a portion of said phase-change material, said exposed portion of said phase-change material being laterally displaced from said inner periphery of said hole;
- and
- providing a second conductive layer over said exposed portion of said phase-change material, said second conductive layer being in electrical communication with said phase-change layer.
6 more elements
Dependencies are inferred from the claim text.