Methods of manufacturing lateral diffused MOS devices with layout controlled body curvature and related devices
AssigneeMonolithic Power Systems, Inc.
InventorJeesung Jung
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Abstract
The present invention discloses a method of manufacturing an N-type LDMOS device. The method comprises forming a gate above the semiconductor substrate; forming a body, comprising forming a Pwell apart from the gate and forming a Pbase partly in the Pwell, wherein the Pbase is wider and shallower than the Pwell; and forming an N-type source and a drain contact region. Wherein the body curvature of the LDMOS device is controlled by adjusting the layout width of the Pwell.
Claims18
A method of forming a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device in a semiconductor substrate wherein the semiconductor substrate has a top surface, the method comprising:
- forming a gate above the semiconductor substrate;
- forming a body having a body curvature, comprising:
- forming a well in the semiconductor substrate from the top surface, wherein the well is of a first doping type;
- forming a base region of a first doping type from the top surface, wherein the base region is formed partly in the well, and wherein the base region is wider and shallower than the well;
- and
- forming a source region and a drain contact region of a second doping type, wherein the source region is adjacent to the body at one side of the gate and wherein the drain contact region is at another side of the gate;
- and wherein the body curvature defined by outlines of the well and the base region is controlled by adjusting the layout width of the well;
- and wherein
- the layout width of the well is increased to increase a breakdown voltage of the LDMOS device.
A method of forming a Lateral Diffused Metal Oxide Semiconductor (LDMOS) device in a semiconductor substrate wherein the semiconductor substrate has a top surface, the method comprising:
- forming a first well of a first doping type in the semiconductor substrate from the top surface, wherein the first well is configured to have a layout space;
- forming a body having a body curvature, comprising:
- forming a second well of a second doping type in the semiconductor substrate from the top surface, wherein the second well is formed in the layout space of the first well;
- forming a base region of a second doping type from the top surface, wherein the base region is formed partly in the second well of the second doping type, and wherein the base region is wider and shallower than the second well;
- forming a gate above the semiconductor substrate;
- and
- forming a source and a drain contact region of a first doping type, wherein the source is formed at one side of the gate and the drain contact region is formed at another side of the gate;
- and wherein the body curvature defined by outlines of the second well and the base region is controlled by adjusting the layout space width of the first well;
- and wherein
- the layout space width of the first well is adjusted having a negative relationship with the body curvature.
A semiconductor device, comprising a LDMOS device integrated into a semiconductor substrate, wherein the LDMOS device comprises:
- a gate above the semiconductor substrate;
- a body having a body curvature, the body comprising:
- a well of a first doping type having a lateral width;
- a base of a first doping type, wherein the base is partly in the well, and
- wherein the base is shallower than the well;
- a source of a second doping type abutting the body, wherein the source is at one side of the gate and wherein the source is self-aligned to the gate;
- and
- a drain contact region of a second doping type at another side of the gate;
- wherein the body curvature has a negative relationship with the lateral width of the well.
Dependencies are inferred from the claim text.