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US 8,796,096 B2Granted
Self-aligned double-gate graphene transistor
AssigneeInternational Business Machines Corporation
InventorsDamon B. Farmer, Aaron D. Franklin, Joshua T. Smith
Life of this patent
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Abstract
A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.
Claims20
A method of fabricating a semiconducting device, comprising:
- forming a graphene sheet on a substrate;
- forming a first contact and a second contact on the graphene sheet to define a gap between the first contact and the second contact;
- forming at least one slot in the graphene sheet having a width that allows an etchant to pass through the graphene sheet;
- and
- applying the etchant to the substrate through the at least one slot formed in the graphene sheet to etch the substrate below the graphene sheet.
2 more elements
A method of fabricating a transistor, comprising:
- forming a graphene sheet on a substrate;
- forming two or more contacts on the graphene sheet to define a gap between the two or more contacts;
- forming at least one slot in the graphene sheet having a width that allows an etchant to pass through the graphene sheet;
- and
- removing a portion of the substrate in the gap via passing the etchant through the at least one slot.
2 more elements
A method of making a self-aligned graphene transistor, comprising:
- forming a graphene sheet on a substrate;
- forming a source contact on the graphene sheet;
- forming a drain contact on the graphene sheet, wherein the drain contact is separated from the source contact by a gap;
- forming at least one slot in the graphene sheet having a width that allows an etchant to pass through the graphene sheet;
- and
- removing a portion of the substrate in the gap between the source contact and the drain contact via passing the etchant through the at least one slot.
3 more elements
Dependencies are inferred from the claim text.