Method for manufacturing semiconductor device with first and second gates over buried bit line
AssigneeSK hynix Inc.
InventorHyung Jin Park
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate.
Claims9
A method for manufacturing a semiconductor device, the method comprising:
- forming a buried bit line in a substrate;
- forming first and second gates over the substrate;
- forming a first plug recessed between the first and second gates;
- and
- forming a channel layer over a sidewall of the first and second gates,
- wherein the first plug is formed to be coupled to the channel layer and the bit line.
A method for manufacturing a semiconductor device, the method comprising:
- forming a device isolation film defining an active region;
- forming a bit line buried in the active region defined by the device isolation film;
- forming first and second gates over the active region;
- and
- forming a channel layer over a sidewall of the first and second gates.
Dependencies are inferred from the claim text.