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US 8,796,091 B2Granted
Three-dimensional semiconductor memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Il Chang, Youngwoo Park, Kwang Soo Seol
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Abstract
Provided are three-dimensional semiconductor devices. A device includes an electrode structure including conductive patterns sequentially stacked on a substrate, a semiconductor pattern penetrating the electrode structure and including channel regions adjacent to the conductive patterns and vertical adjacent regions between the channel regions, and a semiconductor connecting layer extending from an outer sidewall of the semiconductor pattern to connect the semiconductor pattern to the substrate.
Claims7
A method of fabricating a three-dimensional semiconductor device, comprising:
- forming a mold structure on a substrate, the mold structure comprising a first sacrificial layer and second sacrificial layers on the first sacrificial layer;
- forming an opening penetrating the mold structure to expose the substrate;
- sequentially forming a vertical pattern and a semiconductor pattern in the opening;
- patterning the mold structure to form a trench spaced apart from the opening, wherein the trench exposes the first sacrificial layer;
- removing the exposed first sacrificial layer and a portion of the vertical pattern contacting the first sacrificial layer to form a first recess region that exposes the substrate and a sidewall of the semiconductor pattern;
- and
- forming a semiconductor connecting layer that extends from the exposed sidewall of the semiconductor pattern to connect the semiconductor pattern to the substrate.
4 more elements
Dependencies are inferred from the claim text.