Semiconductor device and method of fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorChul Jin Yoon
Life of this patent
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Abstract
A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the device region is provided, an align trench is formed in the outer region, a dummy trench is formed in the device region, an epi layer is formed over a top surface of the semiconductor substrate and within the dummy trench, a current path changing part is formed over the epi layer, and a gate electrode is formed over the current path changing part. When the epi layer is formed, a current path changing trench corresponding to the dummy trench is formed over the epi layer, and the current path changing part is formed within the current path changing trench.
Claims9
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate with a defined device region and a defined outer region, wherein the outer region is at a periphery of the device region;
- forming a first align trench in the outer region;
- forming a dummy trench in the device region;
- forming an epitaxial layer over a top surface of the semiconductor substrate and within the dummy trench;
- forming a current path changing portion over the epitaxial layer;
- and
- forming a gate electrode over the current path changing portion,
- wherein when the epitaxial layer is formed, a current path changing trench corresponding to the dummy trench is formed on the epitaxial layer, and the current path changing portion is formed within the current path changing trench.
Dependencies are inferred from the claim text.