Method of fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsWeon-Hong Kim, Min-Woo Song, Jung-Min Park
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Abstract
A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer.
Claims4
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- forming a bottom electrode on the substrate;
- forming a first dielectric layer on the bottom electrode such that the first dielectric layer includes a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb;
- forming a second dielectric layer on the first dielectric layer such that the second dielectric layer includes a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb and the first metal oxide and the second metal oxide include different materials;
- forming a third dielectric layer on the second dielectric layer such that the third dielectric layer includes a metal carbon oxynitride;
- and
- forming an upper electrode on the third dielectric layer,
- wherein the metal carbon oxynitride is represented by Chemical Formula 1:
- M(1-x-y-z)OxNyCz (1),
- in Chemical Formula 1, M includes at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, x is about 0.4 to about 0.8, and y and z are each about 0.05 or less.
Dependencies are inferred from the claim text.