Methods of epitaxially forming materials on transistor devices
AssigneeGlobalfoundries Inc.
InventorsStephan Kronholz, Hans-Juergen Thees, Peter Javorka
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Abstract
Disclosed herein are various methods of epitaxially forming materials on transistor devices. In one example, the method includes forming an isolation region in a semiconducting substrate that defines an active area, performing a heating process on the active area to cause an upper surface of the active area to become a curved surface and performing an etching process on the active area to define a recess having a curved bottom surface. The method further includes the steps of forming a channel semiconductor material in the recess with a curved upper surface and forming a gate structure for a transistor above the curved upper surface of the channel semiconductor material.
Claims13
A method, comprising:
- forming an isolation region in a semiconducting substrate, said isolation region defining an active area;
- performing a heating process on said active area to cause an upper surface of said active area to become a curved surface, wherein performing said heating process on said active area comprises performing a heating process at a temperature of at least 820° C. for a duration of at least 300 minutes;
- performing an etching process on said active area to define a recess having a curved bottom surface;
- forming a channel semiconductor material in said recess, said channel semiconductor material having a curved upper surface;
- and
- forming a gate structure for a transistor above said curved upper surface of said channel semiconductor material.
A method, comprising:
- forming an isolation region in a semiconducting substrate, said isolation region defining an active area;
- performing a heating process on said active area to cause an upper surface of said active area to become a curved surface, wherein said heating process is performed at a temperature of at least 820° C. for a duration of at least 300 minutes using hydrogen at an effective gas flow rate of less than 2.0 slm;
- performing an etching process on said active area to define a recess having a curved bottom surface;
- forming a channel semiconductor material in said recess, said channel semiconductor material having a curved upper surface;
- and
- forming a gate structure for a transistor above said curved upper surface of said channel semiconductor material.
A method, comprising:
- forming an isolation region in a semiconducting substrate, said isolation region defining an active area;
- performing a heating process on said active area to cause an upper surface of said active area to become a bowed convex surface, wherein the center of the bowed convex surface is 3-10 nm higher than an edge of the active region;
- performing an etching process on said active area to define a recess having a curved bottom surface;
- forming a channel semiconductor material in said recess, said channel semiconductor material having a curved upper surface;
- and
- forming a gate structure for a transistor above said curved upper surface of said channel semiconductor material.
The method of claim, 12, wherein performing said heating process further comprises performing said heating process using hydrogen at an effective gas flow rate of less than 2.0 slm.
Dependencies are inferred from the claim text.