Tellurium compounds useful for deposition of tellurium containing materials
AssigneeAdvanced Technology Materials, Inc.
InventorsMatthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder, Thomas H. Baum
Life of this patent
Estimating the term…
Abstract
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Claims10
A method of forming a phase change material comprising a tellurium-containing film, comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with a substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor comprising Te2(t-Bu)2 wherein t-Bu is tertiary butyl.
A method of forming a GST film comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with a substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor comprising Te2(t-Bu)2 wherein t-Bu is tertiary butyl.
Dependencies are inferred from the claim text.