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US 8,796,054 B2Granted
Gallium nitride to silicon direct wafer bonding
AssigneeCorning Incorporated
InventorAlexander Usenko
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Abstract
A direct wafer bonding process for joining GaN and silicon substrates involves pre-treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic. The GaN substrate and the silicon substrate may each comprise single crystal wafers. The resulting hybrid semiconductor structure can be used to form high quality, low cost LEDs.
Claims9
A method for forming a hybrid semiconductor structure, said method comprising:
- providing a silicon surface and a nitride surface;
- exposing the silicon surface and the nitride surface to an ammonia-containing plasma to form plasma-treated surfaces;
- exposing the plasma-treated surfaces to molecular ammonia to form respective ammonia-treated surfaces;
- joining the ammonia-treated silicon surface and the ammonia-treated nitride surface to form an intermediate bonding structure;
- and
- annealing the intermediate bonding structure to form a bonded hybrid semiconductor structure having a bonding interface between the silicon surface and the nitride surface.
3 more elements
Dependencies are inferred from the claim text.