US 8,796,048 B1 · Monitoring and measurement of thin film layers

Abstract

The present disclosure provides methods and structures for measurement, control, and monitoring the thickness of thin film layers formed as part of a semiconductor manufacturing process. The methods and structures presented provide the capability to measure and monitor the thickness of the thin film using trench line structures. In certain embodiments, the thin film thickness measurement system can be integrated with thin film growth and control software, providing automated process control (APC) or statistical process control (SPC) capability by measuring and monitoring the thin film thickness during manufacturing. Methods for measuring the thickness of thin films can be important to the fabrication of integrated circuits because the thickness and uniformity of the thin film can determine electrical characteristics of the transistors being fabricated.

Claims19

Dependent claims

A method for monitoring a process that concurrently forms at least one material on vertical and horizontal surfaces on the surface of a substrate, the method comprising:

providing a first substrate having a first surface, the first surface comprising a plurality of trenches of substantially a same depth and having substantially different widths;
applying the process to the first substrate using process parameters selected to provide a target thickness for the at least one material;
identifying a widest one of the plurality of trenches substantially filled with the at least one material to yield an identified trench;
and
determining whether the process provided the target thickness based on the identified trench and pre-defined correlation data specifying a target trench corresponding to the target thickness.

2 more elements

A method for monitoring a process for forming that concurrently forms at least one material on vertical and horizontal surfaces on the surface of a substrate, the method comprising:

providing a first substrate having a first surface, the first surface comprising a plurality of trenches of substantially a same depth and having substantially different widths;
applying the process to the first substrate using process parameters selected to provide a target thickness for the at least one material;
identifying a narrowest one of the plurality of trenches that is incompletely filled yield an identified trench;
and
determining whether the process provided the target thickness based on the identified trench and pre-defined correlation data specifying a target trench corresponding to the target thickness.

2 more elements

Dependencies are inferred from the claim text.

Monitoring and measurement of thin film layers

Life of this patent

Monitoring and measurement of thin film layers

Life of this patent

Abstract

Claims19