Semiconductor device and method for manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorKouichi Nagai
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Abstract
After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W into the contact hole. Next, a ferroelectric capacitor, a second interlayer insulating film, and the like are formed. Thereafter, a contact hole extending from the upper surface of the interlayer insulating film and reaching the first plug is formed. Then, the contact hole is filled with W to form a second plug. With this, even when misalignment occurs, the interlayer insulating film is prevented from being etched.
Claims6
A method for manufacturing a semiconductor device comprising:
- forming a transistor in a semiconductor substrate;
- forming a first insulating film on the semiconductor substrate, and the transistor;
- forming a ferroelectric capacitor on the first insulating film, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode;
- forming a second insulating film on the first insulating film, and the ferroelectric capacitor;
- forming an etching stopper film on the second insulating film;
- forming a first plug, which reaches an impurity region of the transistor, in the etching stopper film, the first insulating film and the second insulating film;
- forming a third insulating film on the etching stopper film and the first plug;
- and
- forming a second plug, which reaches the first plug, in the third insulating film.
Dependencies are inferred from the claim text.