Pattern forming method and method for producing device
AssigneeNikon Corporation
InventorsToshikazu Umatate, Soichi Owa, Tomoharu Fujiwara
Life of this patent
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Abstract
In a pattern forming method, a first L & S pattern is formed on a wafer; a first protective layer, a second L & S pattern having a perpendicular periodic direction to that of the first L & S pattern, and a photoresist layer are formed to cover the first L & S pattern; a third pattern having first apertures is formed in the photoresist layer to be overlapped with a part of the second L & S pattern; second apertures are formed in the first protective layer via the first apertures; and a part of the first L & S pattern is removed via the second apertures. Accordingly, a pattern including a non-periodic portion finer than a resolution limit of an exposure apparatus is formed.
Claims26
A pattern forming method for forming a pattern, the method comprising:
- forming a first pattern having a first line pattern on a substrate;
- forming a first thin film to cover the first pattern;
- forming a second pattern, having a second line pattern extending in a direction intersecting the first line pattern, on the first thin film;
- forming a photosensitive layer to cover the second pattern;
- forming a third pattern having a first aperture in the photosensitive layer so that the third pattern is overlapped with at least a part of the second pattern;
- forming a second aperture in the first thin film by removing a part of the first thin film via the first aperture of the third pattern formed in the photosensitive layer;
- removing a part of the first pattern via the second aperture of the first thin film;
- and
- removing the first thin film and the second pattern.
A pattern forming method for forming a pattern, the method comprising:
- forming a first line and space pattern having a plurality of first lines and a plurality of first spaces arranged alternately in a predetermined direction on a substrate;
- forming a second line and space pattern, having a plurality of second lines and a plurality of second spaces arranged alternately in a direction intersecting the predetermined direction, on the first line and space pattern;
- removing a partial area of a first line, included in the plurality of first lines and existing in a plurality of overlap areas in which the plurality of first lines of the first line and space pattern and the plurality of second spaces of the second line and space pattern are overlapped with one another, by performing etching using a pair of second lines, included in the plurality of second lines and defining the partial area of the first line, as a mask;
- and
- removing the second line and space pattern to form a non-periodic line and space pattern in which a part of the first line of the first line and space pattern is removed.
Dependencies are inferred from the claim text.