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US 8,795,949 B2Granted
Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device
AssigneeFujitsu Limited
InventorsMiwa Kozawa, Koji Nozaki
Life of this patent
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Abstract
To provide a resist pattern improving material, containing: a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof; and water: where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group; m is an integer of 1 to 3; and n is an integer of 3 to 30, where p is an integer of 8 to 20; q is an integer of 3 to 30; and r is an integer of 1 to 8.
Claims19
A resist pattern improving material, comprising:
- a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof;
- and
- water:
- where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group;
- m is an integer of 1 to 3;
- and n is an integer of 3 to 30,
- where p is an integer of 8 to 20;
- q is an integer of 3 to 30;
- and r is an integer of 1 to 8.
6 more elements
A method for forming a resist pattern, comprising:
- after forming a resist pattern, applying a resist pattern improving material so as to cover a surface of the resist pattern, and
- rinsing the resist pattern, the surface of which has been covered with the resist pattern improving material, with a rinsing fluid containing pure water,
- wherein the resist pattern improving material contains:
- a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof;
- and
- water:
- where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group;
- m is an integer of 1 to 3;
- and n is an integer of 3 to 30,
- where p is an integer of 8 to 20;
- q is an integer of 3 to 30;
- and r is an integer of 1 to 8.
9 more elements
A method for producing a semiconductor device, comprising:
- after forming a resist pattern on a processing surface, applying a resist pattern improving material so as to cover a surface of the resist pattern to thereby improve the resist pattern;
- and
- rinsing the resist pattern, the surface of which has been covered with the resist pattern improving material, with a rinsing fluid containing pure water,
- etching the processing surface using the improved resist pattern as a mask so as to pattern the processing surface,
- wherein the resist pattern improving material contains:
- a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof;
- and
- water:
- where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group;
- m is an integer of 1 to 3;
- and n is an integer of 3 to 30,
- where p is an integer of 8 to 20;
- q is an integer of 3 to 30;
- and r is an integer of 1 to 8.
11 more elements
Dependencies are inferred from the claim text.