Negative photoresist composition and patterning method for device
AssigneeLG Chem, Ltd.
InventorsChan-Hyo Park, Kyung-Jun Kim, Yu-Na Kim
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Abstract
The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.
Claims18
A negative photoresist composition comprising:
- an alkali-soluble binder resin;
- a halogen-containing first photo-acid generator;
- a triazine-based second photo-acid generator;
- a cross-linking agent having an alkoxy structure;
- a speed enhancer comprises a phenol novolac-based compound represented by Formula 6:
- wherein l represents a degree of polymerization of a repeating unit and ranges from 2 to 10;
- and
- a solvent.
Dependencies are inferred from the claim text.