# US 8,787,419 B2 · High reliability etched-facet photonic devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,787,419 B2 - Document ID: US8787419B2 - Status: Granted - Kind: B2 - Application number: 11/356,203 - Filed: 2006-02-17 - Published: 2006-08-24 - Granted: 2014-07-22 - Earliest claimed: 2005-02-18 - Assignees: BinOptics Corporation - Applicants: Alex A. Behfar - Inventors: Alex A. Behfar - Web page: https://patentgrep.com/patent/US8787419B2 ## CPC - H01S 5/028: Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers} - H01S 5/0201: {Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth} - H01S 5/0282: {Passivation layers or treatments} - H01S 5/22: having a ridge or stripe structure - H01S 5/323: in AIIIBV compounds, e.g. AlGaAs-laser, {InP-based laser} - H01S 5/0042: {On wafer testing, e.g. lasers are tested before separating wafer into chips} - H01S 5/0202: {Cleaving} - H01S 5/0203: {Etching} - H01S 5/16: Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence) - H01S 5/2214: {based on oxides or nitrides} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device. ## Claims ### Claim 1 A photonic device comprising: a substrate; a semiconductor structure on said substrate; a protective layer; and a metallization layer; said semiconductor structure comprising: a top surface; an active layer located below said top surface; a cladding region located below said active layer; at least one etched facet defining at least one side surface of said semiconductor structure; and at least one etched wall defining remaining side surfaces of said semiconductor structure; wherein said side surfaces are formed on a first portion of said semiconductor structure including said active layer and a second portion of said semiconductor structure extends laterally beyond said side surfaces; wherein said protective layer is a single continuous layer of deposited dielectric material completely covering said side surfaces and said top surface of said semiconductor structure except for a contact window defined by said protective layer on said top surface of said semiconductor structure, wherein said contact window is spaced away from and does not extend to said side surfaces; wherein said metallization layer completely covers said contact window and extends over onto said protective layer to completely seal said contact window; wherein said single continuous layer of deposited dielectric material also extends over said substrate and completely covers said substrate within 750 nm of said at least one etched facet. ### Claim 2 (depends on 1) The photonic device of claim 1, wherein said at least one etched facet is formed by a dry etching process. ### Claim 3 (depends on 1) The photonic device of claim 1, wherein said substrate is InP. ### Claim 4 (depends on 1) The photonic device of claim 1, wherein said substrate is GaAs. ### Claim 5 (depends on 1) The photonic device of claim 1, wherein said substrate is GaN. ### Claim 6 (depends on 1) The photonic device of claim 1, wherein said device is a laser. ### Claim 7 (depends on 6) The photonic device of claim 6, wherein said laser is a ridge laser. ### Claim 8 (depends on 7) The photonic device of claim 7, wherein said ridge laser comprises a ridge having a top surface and a plurality of side surfaces, wherein said contact window is disposed at said ridge top surface, and wherein said protective layer completely covers each of said ridge top and side surfaces except for said contact window. ### Claim 9 (depends on 1) The photonic device of claim 1, wherein said device is an electroabsorption modulator. ### Claim 10 (depends on 1) The photonic device of claim 1, wherein said device is a semiconductor optical amplifier. ### Claim 11 (depends on 1) The photonic device of claim 1, wherein said protective layer is formed of silicon dioxide. ### Claim 12 (depends on 1) The photonic device of claim 1, wherein said substrate has a singulation edge no less than about 750 nm from said at least one etched facet, and wherein said protective layer completely covers said substrate between said at least one etched facet and said singulation edge. ### Claim 13 (depends on 1) The photonic device of claim 1, wherein said protective layer completely covers a top surface of said second portion of said semiconductor structure that extends laterally beyond said side surfaces. ### Claim 14 (depends on 1) The photonic device of claim 1, further comprising: a second cladding region located above said active layer. ### Claim 15 (depends on 14) The photonic device of claim 14, further comprising: a cap layer located above said second cladding region, said contact window exposing at least a portion of said cap layer on said top surface of said semiconductor structure. ### Claim 16 (depends on 15) The photonic device of claim 15, wherein said metallization layer is formed at least in part on said exposed portion of said cap layer. ### Claim 17 (depends on 1) The photonic device of claim 1, further comprising: a contact formed on a bottom surface of said substrate opposite said semiconductor structure.