# US 8,787,076 B2 · Magnetic memory and method of manufacturing the same

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- Number: US 8,787,076 B2
- Document ID: US8787076B2
- Status: Granted
- Kind: B2
- Application number: 13/061,299
- Filed: 2009-08-13
- Published: 2011-07-07
- Granted: 2014-07-22
- Earliest claimed: 2008-09-02
- Assignees: NEC Corporation
- Applicants: Shunsuke Fukami; Nobuyuki Ishiwata; Tetsuhiro Suzuki; Kiyokazu Nagahara; Norikazu Ohshima
- Inventors: Shunsuke Fukami; Nobuyuki Ishiwata; Tetsuhiro Suzuki; Kiyokazu Nagahara; Norikazu Ohshima
- Web page: https://patentgrep.com/patent/US8787076B2

## CPC

- G11C 19/0808: {using magnetic domain propagation}
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1655: {Bit-line or column circuits}
- G11C 11/1659: {Cell access}
- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C 19/0841: {using electric current}
- H10N 50/10: Magnetoresistive devices
- H10B 61/22: {of the field-effect transistor [FET] type}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.

## Claims

### Claim 1

A magnetic memory comprising:
a first underlayer;
a second underlayer formed on said first underlayer so as to be in contact with said first underlayer; and
a data storage layer formed on said second underlayer so as to be in contact with said second underlayer,
wherein said data storage layer is a Co/Ni laminated film having perpendicular magnetic anisotropy and has an fcc(111) orientation crystal structure, and
a magnetization state of said data storage layer is changed by current driven domain wall motion.

### Claim 2 (depends on 1)

The magnetic memory according to claim 1,
wherein said first underlayer includes a fourth to sixth group element, and
said second underlayer includes a ninth to eleventh group element.

### Claim 3 (depends on 2)

The magnetic memory according to claim 2,
wherein a film thickness of said first underlayer is not less than 1 nm and not more than 10 nm.

### Claim 4 (depends on 2)

The magnetic memory according to claim 2,
wherein a film thickness of said second underlayer is not less than 1.1 nm and not more than 3 nm.

### Claim 5 (depends on 1)

The magnetic memory according to claim 1,
wherein said first underlayer includes any of Ti, Zr, Nb, Mo, Hf, Ta and W or alloy consisting of a plurality of materials selected from Ti, Zr, Nb, Mo, Hf, Ta and W.

### Claim 6 (depends on 5)

The magnetic memory according to claim 5,
wherein said first underlayer includes at least Ta.

### Claim 7 (depends on 1)

The magnetic memory according to claim 1,
wherein said second underlayer includes any of Cu, Rh, Pd, Ag, Ir, Pt and Au or alloy consisting of a plurality of materials selected from Cu, Rh, Pd, Ag, Ir, Pt and Au.

### Claim 8 (depends on 7)

The magnetic memory according to claim 7,
wherein said second underlayer includes at least one material of Pt and Pd.

### Claim 9 (depends on 1)

The magnetic memory according to claim 1, wherein said data storage layer comprises at least two Co/Ni laminated films.

### Claim 10 (depends on 9)

The magnetic memory according to claim 9, wherein said at least two CO/Ni laminated films comprise a first layer which includes Co and a second layer which includes Ni, and
wherein the first layer is formed on a side of the at least two Co/Ni laminated films which is directed to that second underlayer.

### Claim 11 (depends on 9)

The magnetic memory according to claim 9, wherein the second layer is formed on an upper side of the first layer.