# US 8,787,069 B2 · Write and erase scheme for resistive memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,787,069 B2 - Document ID: US8787069B2 - Status: Granted - Kind: B2 - Application number: 13/592,224 - Filed: 2012-08-22 - Published: 2012-12-20 - Granted: 2014-07-22 - Earliest claimed: 2010-06-14 - Assignees: Crossbar, Inc. - Applicants: Hagop Nazarian; Sung Hyun Jo - Inventors: Hagop Nazarian; Sung Hyun Jo - Web page: https://patentgrep.com/patent/US8787069B2 ## CPC - G11C 13/0069: {Writing or programming circuits or methods} - G11C 13/0011: {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]} - G11C 13/0064: {Verifying circuits or methods} - G11C 2013/0066: {Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing} - G11C 2213/15: Current-voltage curve - G11C 2213/33: Material including silicon - Y10T 29/49004: including measuring or testing of device or component part - G11C: STATIC STORES (semiconductor memory devices H10B) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value. ## Claims ### Claim 1 A method for programming a two terminal resistive memory device, the method comprising: applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell by detecting a rate of a current change with respect to a change in the bias voltage across; and initiating a termination process to stop applying of the bias voltage after the rate of the current change with respect to the change in the bias voltage is equal to or greater than a predetermined value. ### Claim 2 (depends on 1) The method of claim 1, wherein the termination process is completed a certain time delay after the termination process has been initiated. ### Claim 3 (depends on 1) The method of claim 1 wherein the bias voltage comprises a series of pulses having increasing voltage with respect to time. ### Claim 4 (depends on 1) The method of claim 1, wherein measuring the current comprises determining a rate of a current change with respect to time. ### Claim 5 (depends on 1) The method of claim 1, wherein measuring the current comprises determining a current change with respect to time. ### Claim 6 (depends on 1) The method of claim 1, wherein the rate of the current change is determined by measuring a resistance of the two-terminal resistive memory device. ### Claim 7 A method for programming a two terminal resistive memory device including a top electrode, a switching element, and a bottom electrode comprising: initiating formation of a conductive filament within the switching element by initiating application of a bias voltage to the first electrode of the resistive memory cell of the device to thereby begin forming the conductive filament within the switching element; while initiating the formation of the conductive filament within the switching element, measuring a current flowing through the resistive memory cell by detecting a rate of a current change with respect to a voltage change; and terminating the formation of the conductive filament within the switching element by terminating the application of the bias voltage after the rate of the current change with respect to voltage change is equal to or greater than a predetermined value. ### Claim 8 (depends on 7) The method of claim 7, wherein measuring the current comprises: detecting a rate of a current change with respect to time. ### Claim 9 (depends on 7) The method of claim 7 wherein the bias voltage comprises an increasing voltage with respect to time. ### Claim 10 (depends on 7) The method of claim 7 wherein the bias voltage comprises a series of pulses having increasing voltage with respect to time. ### Claim 11 (depends on 7) The method of claim 7, wherein the terminating the formation of the conductive filament occurs a certain time delay after the rate of the current change with respect to the voltage change is equal to or greater than the predetermined value. ### Claim 12 (depends on 7) The method of claim 7 wherein the bias voltage comprises a series of pulses having increasing voltage with respect to time. ### Claim 13 (depends on 7) The method of claim 7, wherein measuring the current comprises determining a rate of a current change with respect to time. ### Claim 14 (depends on 7) The method of claim 7, wherein measuring the current comprises determining a current change with respect to time. ### Claim 15 (depends on 7) The method of claim 7, wherein the rate of the current change is determined by measuring a resistance of the two-terminal resistive memory device. ### Claim 16 A circuit for programming a two terminal resistive memory device, the circuit comprising: means for applying a bias voltage to a first electrode of a resistive memory cell of the device; means for measuring a current flowing through the cell by detecting a rate of a current change with respect to a voltage change; and means for initiating a termination process to stop applying of the bias voltage after the rate of the current change with respect to the voltage change is equal to or greater than a predetermined value. ### Claim 17 (depends on 16) The circuit of claim 16 wherein the bias voltage comprises an increasing voltage with respect to time. ### Claim 18 (depends on 16) The circuit of claim 16 wherein the bias voltage comprises a series of pulses having increasing voltage with respect to time. ### Claim 19 (depends on 16) The circuit of claim 16, wherein the termination process begins a certain time delay after the rate of the current change with respect to the voltage change is equal to or greater than the predetermined value.