# US 8,787,062 B2 · Pinning magnetic domain walls in a magnetic domain shift register memory device

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- Number: US 8,787,062 B2
- Document ID: US8787062B2
- Status: Granted
- Kind: B2
- Application number: 13/539,544
- Filed: 2012-07-02
- Published: 2014-01-02
- Granted: 2014-07-22
- Earliest claimed: 2012-07-02
- Assignees: International Business Machines Corporation
- Applicants: Anthony J. Annunziata; Michael C. Gaidis
- Inventors: Anthony J. Annunziata; Michael C. Gaidis
- Web page: https://patentgrep.com/patent/US8787062B2

## CPC

- G11C 19/0808: {using magnetic domain propagation}
- G11C 11/14: using thin-film elements
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C 19/0841: {using electric current}
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A magnetic domain wall shift register memory device includes a nanowire, a plurality of pinning sites disposed along the nanowire and a control line arranged substantially parallel to the nanowire and configured to support a current.

## Claims

### Claim 1

A magnetic domain wall shift register memory device, comprising:
a nanowire;
a plurality of pinning sites disposed along the nanowire;
a control line arranged substantially parallel and non-collinear to the nanowire and configured to support a current; and
a plurality of magnetized pinning structures disposed along the control line.

### Claim 2 (depends on 1)

The device as claimed in claim 1 wherein each of the plurality of pinning sites are disposed adjacent a respective magnetized pinning structure of the plurality of magnetized pinning structures.

### Claim 3 (depends on 1)

The device as claimed in claim 1 wherein each of the plurality of magnetized pinning structures is configured to generate a magnetic field at a respective pinning site of the plurality of pinning sites.

### Claim 4 (depends on 3)

The device as claimed in claim 3 wherein the magnetic field from the control line weakens a pinning strength at the respective pinning site.

### Claim 5 (depends on 3)

The device as claimed in claim 3 wherein the magnetic field from the control line switches an orientation of the respective pinning site.

### Claim 6 (depends on 3)

The device as claimed in claim 3 wherein the current is a current pulse.

### Claim 7 (depends on 1)

The device as claimed in claim 1 wherein each of the plurality of pinning sites pins a domain wall at a location along the nanowire.

### Claim 8 (depends on 1)

The device as claimed in claim 1 one wherein each of the plurality of magnetized pinning structures increases a pinning strength at a respective pinning site of the plurality of pinning sites.

### Claim 9

A magnetic domain wall shift register memory device, comprising:
a nanowire;
a plurality of pinning sites disposed along the nanowire;
a plurality of control wire loops disposed substantially parallel and non-collinear to the nanowire and configured to support a current; and
a plurality of magnetized pinning structures disposed in a respective control wire loop of the plurality of control wire loops.

### Claim 10 (depends on 9)

The device as claimed in claim 9 wherein each of the plurality of pinning sites are disposed adjacent a respective magnetized pinning structure of the plurality of magnetized pinning structures.

### Claim 11 (depends on 9)

The device as claimed in claim 9 wherein each of the plurality of magnetized pinning structures is configured to generate a magnetic field at a respective pinning site of the plurality of pinning sites.

### Claim 12 (depends on 11)

The device as claimed in claim 11 wherein the magnetic field from a control wire loop weakens a pinning strength at the respective pinning site.

### Claim 13 (depends on 11)

The device as claimed in claim 11 wherein the magnetic field from a control wire loop switches an orientation of the respective pinning site.

### Claim 14 (depends on 11)

The device as claimed in claim 11 wherein the current is a current pulse.

### Claim 15 (depends on 9)

The device as claimed in claim 9 wherein each of the plurality of pinning sites pins a domain wall at a location along the nanowire.

### Claim 16 (depends on 9)

The device as claimed in claim 9 one wherein each of the plurality of magnetized pinning structures increases a pinning strength at a respective pinning site of the plurality of pinning sites.